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| DIM200MHS17-A000 DIM200MHS17-A000 Half Bridge IGBT Module Replaces issue February 2002, version DS5459-3.0 DS5459-4.0 March 2002 FEATURES s s s 10s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS s s s Inverters Motor Controllers 11(C2) 6(G2) 7(E2) 3(C1) Traction Drives 1(E1C2) 2(E2) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200MHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 9(C1) 5(E1) 4(G1) Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order As: DIM200MHS17-A000 Note: When ordering, please use the whole part number. 11 10 8 9 1 2 3 6 7 5 4 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com DIM200MHS17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Tcase = 65C 1ms, Tcase = 110C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1700 20 200 400 1488 7.5 4000 Units V V A A W kA2s V 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MHS17-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) Al2O3 Cu 20mm 8mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 -40 150 125 125 5 5 C C C Nm Nm 15 C/kW 176 C/kW Min. Typ. Max. 84 Units C/kW Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com DIM200MHS17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 200A IF = 200A, Tcase = 125C Cies LM RINT SCData Input capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 Min. 4.5 Typ. 5.5 2.7 3.4 2.2 2.3 15 30 900 800 Max. 1 10 1 6.5 3.2 4.0 200 400 2.5 2.6 Units mA mA A V V V A A V V nF nH m A A 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MHS17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 900V, dIF/dt = 3000A/s Test Conditions IC = 200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 590 300 40 320 90 50 65 195 42 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 900V, dIF/dt = 2500A/s Test Conditions IC = 200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 880 410 60 110 450 85 100 195 64 Max. Units ns ns mJ ns ns mJ C A mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com DIM200MHS17-A000 TYPICAL CHARACTERISTICS 400 Common emitter. Tcase = 25C and not the auxiliary terminals 400 Common emitter. Tcase = 125C 350 Vce is measured at power busbars and not the auxiliary terminals 350 Vce is measured at power busbars 300 Collector current, IC - (A) 300 250 200 150 100 VGE = 20V 15V 12V 10V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Collector current, IC - (A) 250 200 150 100 50 0 0 VGE = 20V 15V 12V 10V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Collector-emitter voltage, Vce - (V) 5.5 6 50 0 0 Collector-emitter voltage, Vce - (V) Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 80 Conditions: Tc = 125C, 70 Rg = 4.7, Vcc = 900V 60 Switching energy, Esw - (mJ) 120 Conditions: Tc = 125C, IC = 200A, 100 Vcc = 900V Switching energy, Esw - (mJ) 50 40 30 20 10 0 0 Eon Eoff Erec 20 40 60 80 100 120 140 160 180 200 Collector current, IC - (A) 80 60 40 20 Eon Eoff Erec 5 6 7 8 Gate resistance, Rg - (Ohms) 9 10 0 4 Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MHS17-A000 400 350 450 VF is measured at power busbars and not the auxiliary terminals 400 Tj = 25C 350 Collector current, IC - (A) 300 Chip 300 Foward current, IF - (A) 250 Tj = 125C 200 150 100 50 0 0 Module 250 200 150 100 Conditions: T = 125C 50 case Vge = 15V Rg(off) = 4.7ohms 0 0 200 400 600 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 3.5 800 1000 1200 1400 1600 1800 Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 200 175 150 Reverse current, IR - (A) 1000 100 125 100 75 50 25 Tj = 125C 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000 Collector current, IC - (A) 10 IC(max) DC tp = 50s tp = 100s 1 tp = 1 ms 0.1 1 Tvj = 125C, Tc = 65C 10 100 1000 Collector emitter voltage, Vce - (V) 10000 Fig. 9 Diode reverse bias safe operating area Fig. 10 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com DIM200MHS17-A000 1000 350 Transient thermal impedance, Zth (j-c) - (C/kW ) 300 Diode DC collector current, IC - (A) 10 250 100 Transistor 200 150 10 1 2 3 Ri (C/KW) 1.9448 8.7613 46.2922 i (ms) 0.1596 2.2324 39.8386 Ri (C/KW) 6.1215 19.4376 74.0453 i (ms) 0.0064351 1.3234 31.1756 0.01 0.1 Pulse width, tp - (s) 1 4 27.0126 176.9288 76.4438 97.9395 100 IGBT Diode 1 0.001 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160 Fig. 11 Transient thermal impedance Fig. 12 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MHS17-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 0.5 28 0.5 11 6 62 0.8 48 0.3 10 1 2 3 7 4x Fast on tabs 8 9 5 4 93 0.3 3x M6 8 31 0.8 23 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com DIM200MHS17-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5459-4 Issue No. 4.0 March 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com |
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